WSD100N15DN56G N-rás 150V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET vöruyfirlit
Spenna WSD100N15DN56G MOSFET er 150V, straumurinn er 100A, viðnámið er 6mΩ, rásin er N-rás og pakkinn er DFN5X6-8.
WINSOK MOSFET notkunarsvæði
Læknisaflgjafar MOSFET, PDs MOSFET, drónar MOSFET, rafsígarettur MOSFET, helstu tæki MOSFET og rafmagnsverkfæri MOSFET.
MOSFET breytur
Tákn | Parameter | Einkunn | Einingar |
VDS | Drain-Source Spenna | 150 | V |
VGS | Gate-Source Spenna | ±20 | V |
ID | Stöðugur frárennslisstraumur, VGS@ 10V(TC=25℃) | 100 | A |
IDM | Púlsaður afrennslisstraumur | 360 | A |
EAS | Single Pulse Avalanche Energy | 400 | mJ |
PD | Heildaraflsdreifing...C=25℃) | 160 | W |
RθJA | Hitaviðnám, mótum-umhverfi | 62 | ℃/V |
RθJC | Hitaviðnám, tengi-hylki | 0,78 | ℃/V |
TSTG | Geymsluhitasvið | -55 til 175 | ℃ |
TJ | Hitasvið rekstrarmóts | -55 til 175 | ℃ |
Tákn | Parameter | Skilyrði | Min. | Týp. | Hámark | Eining |
BVDSS | Niðurbrotsspenna frá holræsi | VGS=0V, ID=250uA | 150 | --- | --- | V |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 9 | 12 | mΩ |
VGS(þ) | Gate Threshold Voltage | VGS=VDS, égD=250uA | 2.0 | 3.0 | 4.0 | V |
IDSS | Drain-Source lekastraumur | VDS=100V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
IGSS | Gate-Source Lekastraumur | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
Qg | Heildarhliðargjald | VDS=50V, VGS=10V, ID=20A | --- | 66 | --- | nC |
Qgs | Hliðsuppspretta gjald | --- | 26 | --- | ||
Qgd | Gate-Drain Charge | --- | 18 | --- | ||
Td(on) | Töf á kveikju | VDD=50V,VGS=10V RG=2Ω, ID=20A | --- | 37 | --- | ns |
Tr | Uppgangstími | --- | 98 | --- | ||
Td(slökkt) | Slökktingartími | --- | 55 | --- | ||
Tf | Hausttími | --- | 20 | --- | ||
Ciss | Inntaksrýmd | VDS=30V, VGS=0V, f=1MHz | --- | 5450 | --- | pF |
Coss | Úttaksrýmd | --- | 1730 | --- | ||
Crss | Reverse Transfer Capacity | --- | 195 | --- |